Morgan Lewis
Photo of  K. Karen Loewenstein

Honors + Affiliations

Member, American Intellectual Property Law Association

Bar Admissions

  • District of Columbia

Court Admissions

  • U.S. Patent and Trademark Office
Print Profile

K. Karen Loewenstein
Partner


Email: kloewenstein@morganlewis.com
Washington, D.C.
1111 Pennsylvania Ave., NW
Washington, D.C. 20004-2541
Phone: 202.739.5635
Fax: 202.739.3001
Beijing
Beijing Kerry Centre North Tower, Suite 2005, 20th Fl.
No. 1 Guang Hua Road, Chaoyang District
Beijing 100020, China
Phone: +86 10 5876 3588
Fax: +86 10 5876 3501

Karen K. Loewenstein, Ph.D. is a partner in Morgan Lewis's Intellectual Property Practice. She concentrates her practice on patent litigation, client counseling, patent infringement and validity opinion work, and patent licensing and other IP transactional work. She has worked on several patent litigation cases involving semiconductor technology, including semiconductor DRAM devices, semiconductor liquid crystal display (LCD) devices, and semiconductor light emitting devices (LEDs) and lasers. She also routinely prepares infringement and validity opinions and prosecutes patent applications involving a variety of technologies in the electrical field.

Dr. Loewenstein has a long history with the firm. She joined the firm as a technical specialist/patent agent in October 1995, and became an associate with the firm in February 1998 after receiving her J.D. from Georgetown University Law Center. In December 2003, she joined Honeywell International Inc. as the assistant general counsel of Intellectual Property, for the Engines, Systems & Services business unit of Honeywell. She returned to Morgan Lewis in September 2004, to continue her legal practice in the IP area, and also to devote a significant amount of her time helping the firm to develop the Chinese legal market.

Before attending law school, Dr. Loewenstein also worked as a senior scientist with Hughes STX Corporation on the NASA Cosmic Background Explorer project. She has an extensive technical background in the areas of electrical, computer, semiconductor, and telecommunications technology.

Dr. Loewenstein earned her J.D., magna cum laude, from Georgetown University Law Center in 1997. She earned her Ph.D. in 1991 and her M.S. in 1990 from Virginia Polytechnic Institute. Dr. Loewenstein earned her B.S. from Beijing University in Beijing, China. She is fluent in Chinese and English.

Dr. Loewenstein is admitted to practice in the District of Columbia only and is a registered patent attorney with the U.S. Patent and Trademark Office.

Education

  • Georgetown University Law Center, 1997, J.D. (Law)
  • Virginia Polytechnic Institute, 1991, Ph.D. (Physics)
  • Virginia Polytechnic Institute, 1990, M.S. (Physics)
  • Beijing University, 1984, B.S. (Physics)